KM416C4004C-5 데이터 시트보기 (PDF) - Samsung

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KM416C4004C-5

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

KM416C4004C, KM416C4104C

CMOS DRAM

DC AND OPERATING CHARACTERISTICS (Continued)

Symbol

Power

Speed

Max

KM416C4004C

KM416C4104C

ICC1

Don′t care

-5

-6

90

80

120

110

ICC2

Normal

Don′t care

2

2

ICC3

Don′t care

-5

-6

90

80

120

110

ICC4

Don′t care

-5

-6

100

90

110

100

ICC5

Normal

Don′t care

1

1

ICC6

Don′t care

-5

-6

120

110

120

110

Units

mA

mA

mA

mA

mA

mA

mA

mA

mA

mA

ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)

ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)

ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)

ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)

*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one EDO mode cycle time tHPC.

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