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L6230 데이터 시트보기 (PDF) - STMicroelectronics

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L6230 Datasheet PDF : 24 Pages
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Electrical characteristics
4
Electrical characteristics
L6230
(VS = 48 V, TA = 25 °C, unless otherwise specified)
Table 6. Electrical characteristics
Symbol
Parameter
Test condition
Min Typ Max Unit
VSth(ON) Turn-on threshold
VSth(OFF) Turn-off threshold
IS
Quiescent supply current
Tj(OFF) Thermal shutdown temperature
Output DMOS transistors
All bridges OFF;
TJ = -25 °C to 125 °C(1)
5.8 6.3 6.8 V
5 5.5 6 V
5 10 mA
165
°C
RDS(on)
High-side / low-side switch ON
resistance
IDSS Leakage current
TJ = 25 °C
TJ =125 °C (1)
0.73 0.85 Ω
1.18 1.35 Ω
DIAG-EN = LOW; OUT = VS
2 mA
DIAG-EN = LOW; OUT = GND -0.3
mA
Source drain diodes
VSD Forward ON voltage
trr
Reverse recovery time
tfr
Forward recovery time
Logic inputs (INx, ENx, DIAG-EN)
ISD = 1.4 A, DIAG-EN = LOW
If = 1.4 A
1.15 1.3 V
300
ns
200
ns
VIL
Low level logic input voltage
VIH
High level logic input voltage
IIL
Low level logic input current
IIH
High level logic input current
Switching characteristics
2
GND logic input voltage
-10
7 V logic input voltage
0.8 V
V
µA
10 µA
tD(ON)EN
tD(OFF)EN
tD(ON)IN
tD(OFF)IN
tRISE
tFALL
tDT
fCP
Enable to output turn-on delay
time (2)
Enable to output turn-off delay time (2)
Other logic inputs to OUT turn-ON delay
time
Other logic inputs to OUT turn-OFF
delay time
ILOAD = 1.4 A, resistive load
Output rise time (2)
Output fall time (2)
Dead time
Charge pump frequency
TJ = -25 °C to 125 °C (1)
500 650 800 ns
500
1000 ns
1.6
µs
800
ns
40
250 ns
40
250 ns
0.5 1
µs
0.6 1 MHz
8/24
Doc ID 18094 Rev 2

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