LC4384C-10F256BI 데이터 시트보기 (PDF) - Lattice Semiconductor

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LC4384C-10F256BI

3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs

Lattice Semiconductor 

Lattice Semiconductor

ispMACH 4000V/B/C/Z Family Data Sheet

Absolute Maximum Ratings1, 2, 3

ispMACH 4000C/Z

(1.8V)

ispMACH 4000B

(2.5V)

ispMACH 4000V

(3.3V)

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V. . . . . . . . . . . -0.5 to 5.5V

Output Supply Voltage (VCCO) . . . . . . . . . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V. . . . . . . . . . . -0.5 to 4.5V

Input or I/O Tristate Voltage Applied4, 5 . . . . . . . . . -0.5 to 5.5V . . . . . . . . . .-0.5 to 5.5V. . . . . . . . . . . -0.5 to 5.5V

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C. . . . . . . . . -65 to 150°C. . . . . . . . . .-65 to 150°C

Junction Temperature (Tj) with Power Applied . . . -55 to 150°C. . . . . . . . . -55 to 150°C. . . . . . . . . .-55 to 150°C

1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation of the device at these or any other conditions above those indicated in the operational sections of this specification

is not implied.

2. Compliance with Lattice Thermal Management document is required.

3. All voltages referenced to GND.

4. Undershoot of -2V and overshoot of (VIH (MAX) + 2V), up to a total pin voltage of 6.0V, is permitted for a duration of < 20ns.

5. Maximum of 64 I/Os per device with VIN > 3.6V is allowed.

Recommended Operating Conditions

Symbol

Parameter

ispMACH 4000C

Supply Voltage for 1.8V Devices

ispMACH 4000Z

VCC

ispMACH 4000Z, Extended Functional Voltage

Operation

Supply Voltage for 2.5V Devices

Supply Voltage for 3.3V Devices

Junction Temperature (Commercial)

Tj

Junction Temperature (Industrial)

Junction Temperature (Extended)

1. Devices operating at 1.6V can expect performance degradation up to 35%.

2. Applicable for devices with 2004 date codes and later. Contact factory for ordering instructions.

Erase Reprogram Specifications

Min.

1.65

1.7

1.61, 2

2.3

3.0

0

-40

-40

Max.

1.95

1.9

1.9

2.7

3.6

90

105

130

Units

V

V

V

V

V

C

C

C

Parameter

Erase/Reprogram Cycle

Note: Valid over commercial temperature range.

Hot Socketing Characteristics1,2,3

Min.

1,000

Max. Units

— Cycles

Symbol

Parameter

Condition

Min. Typ. Max. Units

IDK

Input or I/O Leakage Current 0 ≤ VIN ≤ 3.0V, Tj = 105°C

0 ≤ VIN ≤ 3.0V, Tj = 130°C

—

±30 ±150

µA

—

±30 ±200

µA

1. Insensitive to sequence of VCC or VCCO. However, assumes monotonic rise/fall rates for VCC and VCCO, provided (VIN - VCCO) ≤ 3.6V.

2. 0 < VCC < VCC (MAX), 0 < VCCO < VCCO (MAX).

3. IDK is additive to IPU, IPD or IBH. Device defaults to pull-up until fuse circuitry is active.

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