LH28F400SU-NC 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F400SU-NC Datasheet PDF : 35 Pages
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4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
AC Characteristics for CE » - Controlled Command Write Operations1
VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tPHWL
tVPEH
tWLEL
tAVEH
tDVEH
tELEH
tEHDX
tEHAX
tEHWH
tEHEL
tGHEL
tEHRL
tRHPL
Write Cycle Time
RP » Setup to WE Going Low
VPP Set up to CE » Going High
WE Setup to CE » Going Low
Address Setup to CE» Going High
Data Setup to CE» Going High
CE » Pulse Width
Data Hold from CE» High
Address Hold from CE » High
WE Hold from CE » High
CE » Pulse Width High
Read Recovery before Write
CE » High to RY »/BY » Going Low
RP » Hold from Valid Status Register
Data and RY »/BY » High
tPHEL
tEHGL
tQVVL
RP » High Recovery to CE » Going Low
Write Recovery before Read
VPP Hold from Valid Status Register
Data and RY »/BY » High
tEHQV1 Duration of Byte Write Operation
tEHQV2 Duration of Block Erase Operation
TYP. VCC = 5.0 V ± 0.25 V VCC = 5.0 V ± 0.5 V UNITS NOTE
MIN.
MAX.
MIN.
MAX.
60
70
ns
400
430
ns
3
100
100
ns
3
0
0
ns
55
60
ns
2, 6
55
60
ns
2, 6
55
60
ns
0
0
ns
2
10
10
ns
2
10
10
ns
30
30
ns
0
0
ns
100
100
ns
0
0
ns
3
1
1
µs
60
65
ns
0
0
µs
13
4.5
4.5
µs
4, 5
0.3
0.3
s
4
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte Write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE » for all Command Write operations.
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