LH28F400SU-NC 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F400SU-NC

4M (512K × 8, 256K × 16) Flash Memory

Sharp Electronics 

LH28F400SU-NC

4M (512K × 8, 256K × 16) Flash Memory

DEEP

POWER-DOWN

ADDRESSES (A) VIH

(NOTE 1)

VIL

ADDRESSES (A) VIH

(NOTE 2)

VIL

WRITE

DATA-WRITE

OR ERASE

SETUP COMMAND

WRITE VALID

ADDRESS AND DATA

(DATA-WRITE) OR

ERASE CONFIRM

COMMAND

AIN

tAVAV

tAVEH

tEHAX

AIN

tAVAV

tAVEH tEHAX

AUTOMATED

DATA-WRITE

OR ERASE

DELAY

(NOTE 3)

READ

COMPATIBLE

STATUS

REGISTER DATA

WE (W) VIH

VIL

OE (G) VIH

VIL

CE (E) VIH

VIL

tEHWH

tWLEL

tEHEL

tELEH

tEHDX

tEHGL

tEHQV 1, 2

tGHEL

DATA (D/Q) VIH

VIL

HIGH-Z

tPHEL

tDVEH

DIN

DIN

tEHRL

DIN

DOUT

DIN

RY/BY (R) VOH

VOL

tRHPL

RP (P) VIH

VIL

tVPEH

(NOTE 4)

tQVVL

VPP

(V)

VPPH

VPPL

NOTES:

1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.

2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.

3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.

4. RP low transition is only to show tRHPL; not valid for above Read and Write cycles.

Figure 23. Alternate AC Waveforms for Command Write Operations

28F400SUT-NC60-21

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