LH28F400SU-NC 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F400SU-NC

4M (512K × 8, 256K × 16) Flash Memory

Sharp Electronics 

4M (512K × 8, 256K × 16) Flash Memory

LH28F400SU-NC

Erase and Byte Write Performance

VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C

SYMBOL

PARAMETER

tWHRH1

tWHRH2

tWHRH3

tWHRH4

tWHRH5

tWHRH5

Byte Write Time

Two-Byte Serial Write Time

Word Write Time

16KB Block Write Time

16KB Block Write Time

16KB Block Write Time

Block Erase Time (16KB)

TYP.(1)

13

20

20

0.22

0.17

0.17

0.6

MIN.

MAX. UNITS

TEST CONDITIONS

NOTE

µs

2

µs

2, 3

µs

2, 4

1.0

s Byte Write Mode

2

1.0

s Two-Byte Serial Write Mode 2, 3

1.0

s Word Write Mode

2, 4

10

s

2

Full Chip Erase Time

8.8 - 14.4

s

2, 5

NOTES:

1. 25°C, VPP = 5.0 V Sampled.

2. Excludes System-Level Overhead.

3. Two-Byte Serial Write mode is valid at x8-bit configuration only.

4. Word Write mode is valid at x16-bit configuration only.

5. Depends on the number of protected blocks.

31

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