LH28F800SG-L 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F800SG-L

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

Sharp Electronics 

LH28F800SG-L/SGH-L (FOR TSOP, CSP)

6.2.8 BLOCK ERASE, WORD WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE (NOTE 3, 4)

• VCC = 2.7 to 3.0 V, TA = 0 to +70˚C or –40 to +85˚C

SYMBOL

PARAMETER

VPP = 2.7 to 3.0 V

NOTE MIN. TYP.(NOTE 1) MAX.

tWHQV1

Word Write Time

tEHQV1

2 49 63

Block Write Time

2 1.7 2.1

tWHQV2

Block Erase Time

2

3.0

tEHQV2

tWHQV3

Set Lock-Bit Time

2

44

tEHQV3

tWHQV4 Clear Block Lock-Bits

2

3.8

tEHQV4 Time

tWHRH1 Word Write Suspend

12.6

tEHRH1 Latency Time to Read

tWHRH2 Erase Suspend Latency

tEHRH2 Time to Read

34.1

VPP = 5.0±0.5 V

MIN. TYP.(NOTE 1) MAX.

20 28

0.7 1.0

2.0

28

2.6

10.5

20.2

VPP = 12.0±0.6 V

MIN. TYP.(NOTE 1) MAX. UNIT

15.4

µs

0.56

s

1.9

s

24.4

µs

2.3

s

10.5

µs

20.2

µs

• VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C

SYMBOL

PARAMETER

VPP = 3.3±0.3 V

VPP = 5.0±0.5 V

VPP = 12.0±0.6 V

NOTE MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. UNIT

tWHQV1

Word Write Time

tEHQV1

2 35 45

14 20

11

µs

Block Write Time

2 1.2 1.5

0.5 0.7

0.4

s

tWHQV2

Block Erase Time

2

2.1

1.4

1.3

s

tEHQV2

tWHQV3

Set Lock-Bit Time

2

31

tEHQV3

20

17.4

µs

tWHQV4 Clear Block Lock-Bits

2

2.7

1.8

1.6

s

tEHQV4 Time

tWHRH1 Word Write Suspend

9

tEHRH1 Latency Time to Read

7.5

7.5

µs

tWHRH2 Erase Suspend Latency

tEHRH2 Time to Read

24.3

14.4

14.4

µs

NOTES :

1. Typical values measured at TA = +25˚C and nominal

voltages. Assumes corresponding lock-bits are not set.

Subject to change based on device characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed

versions.

4. Sampled, not 100% tested.

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