LH5PV8512N-12 데이터 시트보기 (PDF) - Sharp Electronics

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LH5PV8512N-12

CMOS 4M (512K × 8) Pseudo-Static RAM

Sharp Electronics 

LH5PV8512

CMOS 4M (512K × 8) Pseudo-Static RAM

DC ELECTRICAL CHARACTERISTICS (TA = 0 to +70°C, VCC = 3.0 V ± 0.15 V)

PARAMETER

SYMBOL

CONDITIONS

MIN. MAX. UNIT

NOTE

Average supply current in normal

operation

ICC1

tRC = 190 ns



40

mA

1

Average supply current in standby

mode

Average supply current in self-refresh

cycle

CE, OE, RFSH = VIH



ICC2

CE, OE, RFSH = VCC - 0.2 V



CE = VIH

OE/RFSH = VIL



ICC3

CE = VCC - 0.2 V,

OE, RFSH = 0.2 V



0.5

mA



30

mA



0.5

mA



70

mA



Input leakage current

ILI

0 V ≤ VIN ≤ VCC + 0.3 V

0 V on all other pins

-5

5

µA



I/O leakage current

ILO

0 V ≤ VOUT ≤ VCC + 0.3 V

Input/output pins in High-Z

-5

5

µA



Output HIGH voltage

VOH

IOUT = -1 mA

2.4



V



Output LOW voltage

VOL

IOUT = 2.1 mA

NOTE:

1. The input/output pins are in high impedance state. ICC1 depends on the cycle time.



0.4

V



4

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