Philips Semiconductors
General purpose PIN diode
Preliminary specification
BAP50-04
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per diode
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
IF = 50 mA
−
IR = 10 µA
50
VR = 50 V
−
VR = 0; f = 1 MHz
−
VR = 1 V; f = 1 MHz
−
VR = 5 V; f = 1 MHz
−
IF = 0.5 mA; f = 100 MHz; note 1 −
IF = 1 mA; f = 100 MHz; note 1 −
IF = 10 mA; f = 100 MHz; note 1 −
0.95 1.1 V
−
−
V
−
100 nA
0.45 −
pF
0.35 0.6 pF
0.3 0.5 pF
25
40
Ω
14
25
Ω
3
5
Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
220
UNIT
K/W
1999 May 10
3