M25P80-VMW3 데이터 시트보기 (PDF) - STMicroelectronics

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M25P80-VMW3

8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

STMicroelectronics 

M25P80

Table 14. Instruction Times (Device Grade 6)

Test conditions specified in Table 9. and Table 16.

Symbol

Alt.

Parameter

Min.

Typ. Max.

Unit

tW

Write Status Register Cycle Time

5

15

ms

tPP

Page Program Cycle Time

1.4

5

ms

tSE

Sector Erase Cycle Time

1

3

s

tBE

Bulk Erase Cycle Time

10

20

s

Table 15. Instruction Times (Device Grade 3)

Test conditions specified in Table 9. and Table 16.

Symbol

Alt.

Parameter

Min. Typ.1,2 Max.2 Unit

tW

Write Status Register Cycle Time

8

15

ms

tPP

Page Program Cycle Time

1.5

5

ms

tSE

Sector Erase Cycle Time

1

3

s

tBE

Bulk Erase Cycle Time

10

20

s

Note: 1. At 85°C

2. This is preliminary data

Table 16. AC Measurement Conditions

Symbol

Parameter

CL

Load Capacitance

Input Rise and Fall Times

Input Pulse Voltages

Input Timing Reference Voltages

Output Timing Reference Voltages

Note: Output Hi-Z is defined as the point where data out is no longer driven.

Min.

Max.

30

5

0.2VCC to 0.8VCC

0.3VCC to 0.7VCC

VCC / 2

Unit

pF

ns

V

V

V

Figure 22. AC Measurement I/O Waveform

Input Levels

0.8VCC

0.2VCC

Input and Output

Timing Reference Levels

0.7VCC

0.5VCC

0.3VCC

AI07455

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