M25P80 데이터 시트보기 (PDF) - Numonyx -> Micron
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M25P80 Datasheet PDF : 52 Pages
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M25P80
Instructions
Table 4. Instruction set
Instruction
Description
One-byte
Address Dummy Data
instruction code bytes bytes bytes
WREN Write Enable
0000 0110 06h
0
WRDI
RDID(1)
Write Disable
Read Identification
0000 0100 04h
0
1001 1111 9Fh
0
RDSR Read Status Register
0000 0101 05h
0
WRSR Write Status Register
0000 0001 01h
0
READ Read Data Bytes
0000 0011 03h
3
FAST_READ
Read Data Bytes at Higher
Speed
0000 1011 0Bh
3
PP
Page Program
0000 0010 02h
3
SE
Sector Erase
1101 1000 D8h
3
BE
Bulk Erase
1100 0111 C7h
0
DP
Deep Power-down
1011 1001 B9h
0
Release from Deep Power-
down, and Read Electronic
0
RES
Signature
1010 1011 ABh
Release from Deep Power-
down
0
0
0
0
0
0
1 to 20
0
1 to ∞
0
1
0
1 to ∞
1
1 to ∞
0
1 to 256
0
0
0
0
0
0
3
1 to ∞
0
0
1. The RDID instruction is available only for parts made with Technology T9HX (0.11µm), identified with
Process letter '4'. (Details of how to find the Technology Process in the part marking are given in AN1995,
see also Section 12: Part numbering.)
6.1
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector
Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
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