SST29EE512(2005) 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST29EE512
(Rev.:2005)

512 Kbit (64K x8) Page-Write EEPROM

Silicon Storage Technology 

512 Kbit Page-Write EEPROM

SST29EE512

Data Sheet

TABLE 11: REVISION HISTORY

Number

06 • 2002 Data Book

Description

07 • WH package is no longer offered

• Removed the SST29EE512 90 ns Read Access Time

• Removed the SST29LE512 200 ns Read Access Time

• Removed the SST29VE512 250 ns Read Access Time

• Clarified IDD Write to be Program and Erase in Table 6 on page 9

08 • 2004 Data Book

• Added non-Pb MPNs and removed footnote (See page 22)

09 • Removed 2.7V and 3V devices and associated MPNs

refer to EOL Product Data Sheet S71060(01).

• Added RoHS compliance information on page 1 and in the

“Product Ordering Information” on page 22

• Clarified the Solder Temperature Profile under “Absolute Maximum Stress Ratings”

on page 8

Date

May 2002

Mar 2003

Nov 2003

Sep 2005

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

©2005 Silicon Storage Technology, Inc.

26

S71060-09-000

9/05

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