IS61VPD51232-166TQ 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61VPD51232-166TQ

512K x 32, 512K x 36, 1024K x 18 SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM

Integrated Silicon Solution 

IS61VPD51232 IS61VPD51236 IS61VPD10018

ISSI ®

WRITE CYCLE TIMING

CLK

ADSP

ADSC

ADV

Address

GW

BWE

BWx

CE

CE2

CE2

tKC

tKH

tKL

tSS

tSH

ADV must be inactive for ADSP Write tAVS

tAS

tAH

WR1

tWS

WR2

tWH

ADSP is blocked by CE inactive

ADSC initiate Write

tAVH

WR3

tWS

tWH

tWS

tWH

tWS

tWH

WR1

WR2

WR3

tCES

tCEH

CE Masks ADSP

tCES

tCEH

tCES

tCEH

CE2 and CE2 only sampled with ADSP or ADSC

Unselected with CE2

OE

DATAOUT

High-Z

tDS

tDH BW4-BW1 only are applied to first cycle of WR2

DATAIN

High-Z

1a

2a

2b

2c

2d

3a

Single Write

Burst Write

Write

Unselected

14

Integrated Silicon Solution, Inc. — 1-800-379-4774

ADVANCE INFORMATION Rev. 00B

09/25/01

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