M29F800DT70M6E 데이터 시트보기 (PDF) - STMicroelectronics

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M29F800DT70M6E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

STMicroelectronics 

M29F800DT

Command Interface

Table 5.

Commands, 8-bit mode, BYTE = VIL(1)

Bus Write operations

Command

1st

2nd

3rd

4th

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset

Auto Select

Program

Unlock Bypass

Unlock Bypass

Program

Unlock Bypass Reset

Chip Erase

Block Erase

Erase Suspend

Erase Resume

Read CFI Query

1 X F0

3 AAA AA 555 55 X F0

3 AAA AA 555 55 AAA 90

4 AAA AA 555 55 AAA A0 PA PD

3 AAA AA 555 55 AAA 20

2 X A0 PA PD

2 X 90 X 00

6 AAA AA 555 55 AAA 80 AAA AA 555

6+ AAA AA 555 55 AAA 80 AAA AA 555

1 X B0

1 X 30

1 AA 98

55 AAA 10

55 BA 30

1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-

DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Table 6.

Program, Erase times and Program, Erase Endurance cycles

Parameter

Min

Typ(1)(2)

Max(2)

Chip Erase

Block Erase (64 Kbytes)

12

60(3)

0.8

6(4)

Erase Suspend Latency time

Program (Byte or Word)

Chip Program (Byte by Byte)

Chip Program (Word by Word)

30

10

200(3)

12

60(3)

6

30(3)

Program/Erase cycles (per Block)

100,000

Data Retention

20

Unit

s

s

µs

µs

s

s

cycles

years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

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