M29W320DB 데이터 시트보기 (PDF) - Numonyx -> Micron

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M29W320DB

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory

Numonyx -> Micron 

Command Interface

M29W320DT, M29W320DB

Table 6. Program, Erase Times and Program, Erase Endurance Cycles

Parameter

Min

Typ(1)(2)

Max(2)

Unit

Chip Erase

Block Erase (64 KBytes)

Erase Suspend Latency Time

Program (Byte or Word)

Accelerated Program (Byte or Word)

Chip Program (Byte by Byte)

Chip Program (Word by Word)

40

200(3)

s

0.8

6(4)

s

15

25(4)

µs

10

200(3)

µs

8

150(3)

µs

40

200(3)

s

20

100(3)

s

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

20

years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

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