M2S56D20TP 데이터 시트보기 (PDF) - Mitsumi

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M2S56D20TP

256M Double Data Rate Synchronous DRAM

Mitsumi 

DDR SDRAM (Rev.0.0)

Sep.'99 Preliminary

MITSUBISHI LSIs

M2S56D20/ 30 TP

256M Double Data Rate Synchronous DRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Conditions

Ratings

Unit

Vdd

Supply Voltage

with respect to Vss

-0.5 ~ 3.7

V

VddQ Supply Voltage for Output with respect to VssQ

-0.5 ~ 3.7

V

VI

Input Voltage

with respect to Vss -0.5 ~ Vdd+0.5

V

VO

Output Voltage

with respect to VssQ -0.5 ~ VddQ+0.5 V

IO

Output Current

50

mA

Pd

Power Dissipation

Ta = 25 °C

1000

mW

Topr

Operating Temperature

0 ~ 70

°C

Tstg

Storage Temperature

-65 ~ 150

°C

DC OPERATING CONDITIONS

(Ta=0 ~ 70°C, unless otherwise noted)

Symbol

Parameter

Limits

Min.

Typ.

Vdd

Supply Voltage

2.3

2.5

VddQ

Supply Voltage for Output

2.3

2.5

Vref

Input Reference Voltage

1.15

1.25

VIH(DC)

High-Level Input Voltage

Vref + 0.18

VIL(DC)

Low-Level Input Voltage

-0.3

VIN(DC) Input Voltage Level, CLK and /CLK

-0.3

VID(DC) Input Differential Voltage, CLK and /CLK

0.36

VTT

I/O Termination Voltage

Vref - 0.04

Max.

Unit Notes

2.7

V

2.7

V

1.35

V5

VddQ+0.3 V

Vref - 0.18 V

VddQ + 0.3 V

VddQ + 0.6 V 7

Vref + 0.04 V 6

CAPACITANCE

(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)

Symbol

Parameter

Test Condition

CI(A) Input Capacitance, address pin

CI(C) Input Capacitance, control pin

CI(K) Input Capacitance, CLK pin

CI/O I/O Capacitance, I/O, DQS, DM pin

CO(QF) Output Capacitance, /QFC

VI=1.25v

f=100MHz

VI=25mVrms

Limits

Min. Max.

2.5

3.5

2.5

3.5

2.5

3.5

4.0

5.5

2.5

3.5

Unit Notes

pF 11

pF 11

pF 11

pF 11

pF 11

MITSUBISHI

ELECTRIC

16

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