DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M54HC688D1 데이터 시트보기 (PDF) - STMicroelectronics

부품명
상세내역
제조사
M54HC688D1
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M54HC688D1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
M74HC688
Table 6: AC Electrical Characteristics (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Symbol
Parameter
VCC
(V)
tTLH tTHL Output Transition
2.0
Time
4.5
6.0
tPLH tPHL Propagation Delay 2.0
Time
4.5
(Pn, Qn - P=Q)
6.0
tPLH tPHL Propagation Delay 2.0
Time
4.5
(G - P=Q)
6.0
Table 7: Capacitive Characteristics
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
30 75
95
110
8 15
19
22 ns
7 13
16
19
60 170
215
255
21 34
43
51 ns
17 29
37
43
40 110
140
165
13 22
28
33 ns
10 19
24
28
Test Condition
Value
Symbol
Parameter
VCC
(V)
CIN Input Capacitance
CPD Power Dissipation
Capacitance (note
1)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
5 10
10
10 pF
32
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
Figure 4: Test Circuit
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50)
5/10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]