M58BV016DB7T3F 데이터 시트보기 (PDF) - Micron Technology

부품명

상세내역

제조사

M58BV016DB7T3F

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Micron Technology 

Command interface

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

4

Command interface

All bus write operations to the memory are interpreted by the command interface.

Commands consist of one or more sequential bus write operations. The commands are

summarized in Table 9: Commands. Refer to Table 9 in conjunction with the text

descriptions below.

4.1

Read Memory Array command

The Read Memory Array command returns the memory to read mode. One bus write cycle is

required to issue the Read Memory Array command and return the memory to read mode.

Subsequent read operations will output the addressed memory array data. Once the

command is issued the memory remains in read mode until another command is issued.

From read mode bus read commands will access the memory array.

4.2

Read Electronic Signature command

The Read Electronic Signature command is used to read the manufacturer code, the device

code or the burst configuration register. One bus write cycle is required to issue the Read

Electronic Signature command. Once the command is issued subsequent bus read

operations, depending on the address specified, read the manufacturer code, the device

code or the burst configuration register until another command is issued; see Table 5:

Asynchronous read electronic signature operation.

4.3

Read Query command

The Read Query command is used to read data from the common Flash interface (CFI)

memory area. One bus write cycle is required to issue the Read Query command. Once the

command is issued subsequent bus read operations, depending on the address specified,

read from the common Flash interface memory area. See Appendix A: Common Flash

interface (CFI), Table 26, Table 27, Table 28, Table 29 and Table 30 for details on the

information contained in the common Flash interface (CFI) memory area.

28/70

Share Link: