M58WR128EB10ZB6T 데이터 시트보기 (PDF) - STMicroelectronics

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M58WR128EB10ZB6T

128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR128ET, M58WR128EB

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS

The Factory Program commands are used to

speed up programming. They require VPP to be at

VPPH except for the Bank Erase command which

also operates at VPP = VDD. Refer to Table 7, Fac-

tory Program Commands, in conjunction with the

following text descriptions.

The use of the Factory Program commands re-

quire certain operating conditions:

s VPP must be set to VPPH (except for Bank Erase

command)

s VDD must be within operating range

s Ambient temperature, TA must be 25°C ± 5°C

s The targeted block must be unlocked

Refer to Table 7, Factory Program Commands, in

conjunction with the following text descriptions.

Bank Erase Command

The Bank Erase command can be used to erase a

bank. It sets all the bits within the selected bank to

’1’. All previous data in the bank is lost. The Bank

Erase command will ignore any protected blocks

within the bank. If all blocks in the bank are pro-

tected then the Bank Erase operation will abort

and the data in the bank will not be changed. The

Status Register will not output any error.

Bank Erase operations can be performed at both

VPP = VPPH and VPP = VDD.

Two Bus Write cycles are required to issue the

command.

s The first bus cycle sets up the Bank Erase

command.

s The second latches the bank address in the

internal state machine and starts the Program/

Erase Controller.

If the second bus cycle is not Write Bank Erase

Confirm (D0h), Status Register bits SR4 and SR5

are set and the command aborts. Erase aborts if

Reset turns to VIL. As data integrity cannot be

guaranteed when the Erase operation is aborted,

the bank must be erased again.

Once the command is issued the device outputs

the Status Register data when any address within

the bank is read. At the end of the operation the

bank will remain in Read Status Register mode un-

til a Read Array, Read CFI Query or Read Elec-

tronic Signature command is issued.

During Bank Erase operations the bank being

erased will only accept the Read Array, Read Sta-

tus Register, Read Electronic Signature and Read

CFI Query command, all other commands will be

ignored.

For optimum performance, Bank Erase com-

mands should be limited to a maximum of 100 Pro-

gram/Erase cycles per Block. After 100 Program/

Erase cycles the internal algorithm will still operate

properly but some degradation in performance

may occur.

Dual operations are not supported during Bank

Erase operations and the command cannot be

suspended.

Typical Erase times are given in Table 14, Pro-

gram, Erase Times and Program/Erase Endur-

ance Cycles.

Double Word Program Command

The Double Word Program command improves

the programming throughput by writing a page of

two adjacent words in parallel. The two words

must differ only for the address A0.

Three bus write cycles are necessary to issue the

Double Word Program command.

s The first bus cycle sets up the Double Word

Program Command.

s The second bus cycle latches the Address and

the Data of the first word to be written.

s The third bus cycle latches the Address and the

Data of the second word to be written and starts

the Program/Erase Controller.

Read operations in the bank being programmed

output the Status Register content after the pro-

gramming has started.

During Double Word Program operations the bank

being programmed will only accept the Read Ar-

ray, Read Status Register, Read Electronic Signa-

ture and Read CFI Query command, all other

commands will be ignored. Dual operations are

not supported during Double Word Program oper-

ations and the command cannot be suspended.

Typical Program times are given in Table 14, Pro-

gram, Erase Times and Program/Erase Endur-

ance Cycles.

Programming aborts if Reset goes to VIL. As data

integrity cannot be guaranteed when the program

operation is aborted, the memory locations must

be reprogrammed.

See Appendix C, Figure 23, Double Word Pro-

gram Flowchart and Pseudo Code, for the flow-

chart for using the Double Word Program

command.

Quadruple Word Program Command

The Quadruple Word Program command im-

proves the programming throughput by writing a

page of four adjacent words in parallel. The four

words must differ only for the addresses A0 and

A1.

Five bus write cycles are necessary to issue the

Quadruple Word Program command.

s The first bus cycle sets up the Double Word

Program Command.

19/87

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