MAC08BT1(2000) 데이터 시트보기 (PDF) - ON Semiconductor

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MAC08BT1
(Rev.:2000)

Sensitive Gate Triacs

ON Semiconductor 

MAC08BT1, MAC08MT1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction to Ambient

PCB Mounted per Figure 1

RθJA

156

Thermal Resistance, Junction to Tab

Measured on MT2 Tab Adjacent to Epoxy

RθJT

25

Maximum Device Temperature for Soldering Purposes

(for 10 Seconds Maximum)

TL

260

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 110°C

ON CHARACTERISTICS

" Peak On–State Voltage(1)

(IT = 1.1 A Peak)

Gate Trigger Current (Continuous dc) All Quadrants

(VD = 12 Vdc, RL = 100 Ω)

" Holding Current (Continuous dc)

(VD = 12 Vdc, Gate Open, Initiating Current = 20 mA)

Gate Trigger Voltage (Continuous dc) All Quadrants

(VD = 12 Vdc, RL = 100 Ω)

DYNAMIC CHARACTERISTICS

IDRM,

IRRM

VTM

IGT

IH

VGT

—

—

10

—

—

200

—

—

1.9

—

—

10

—

—

5.0

—

—

2.0

Critical Rate of Rise of Commutation Voltage

(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS

On–State Current Duration = 2.0 mS, VDRM = 200 V,

Gate Unenergized, TC = 110°C,

Gate Source Resistance = 150 Ω, See Figure 10)

(dv/dt)c

1.5

—

—

Critical Rate–of–Rise of Off State Voltage

(Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method)

(1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

dv/dt

10

—

—

Unit

°C/W

°C/W

°C

Unit

µA

µA

Volts

mA

mA

Volts

V/µs

V/µs

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