SPI Programmable-Gain Amplifier
with Input VOS Trim and Output Op Amp
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 5V, VGND = 0V, VINA+ = VINA-, Gain = 10V/V, ROUTA = ROUTB = 1kΩ to VCC/2, TA = TMIN to TMAX, unless otherwise noted.
Typical values are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Unity-Gain Bandwidth
UGBW
2.2
MHz
Slew Rate
SR
6.4
V/µs
Settling Time
Input-Voltage Noise Density
Distortion
Max Capacitive Load
tS
VN
THD
CL(MAX)
To 1%, 2V output step
f = 1kHz, VOUTA = 2.5VP-P, gain = -1V/V
0.86
µs
36
nV/√Hz
90
dB
1
nF
Output Swing
VOH, VOL
Voltage output high = VCC - VOUTB,
voltage output low = VOUTB - VGND
25
60
mV
POWER SUPPLY
Supply Voltage Range
Power-Supply Rejection Ratio
VCC Guaranteed by PSRR
2.9
5.5
V
1kΩ between OUTA and INB, 1kΩ between
PSRR OUTB and INB, measured differentially
60
80
dB
between OUTA and OUTB
Supply Current
Shutdown Supply Current
ICC
ISHDN
OUTA and OUTB unloaded
Soft shutdown through SPI
3.4
6.7
mA
13
24
µA
SPI CHARACTERISTICS
Input-Voltage Low
VIL
Input-Voltage High
VIH
VCC = 5V
VCC = 3.3V
Input Leakage Current
IIN
Input Capacitance
CIN
SPI TIMING CHARACTERISTICS
2.0
1.65
5
0.8
V
V
±1
µA
pF
SCLK Frequency
fSCLK (Note 5)
5
MHz
SCLK Period
SCLK Pulse-Width High
SCLK Pulse-Width Low
CS Fall to SCLK Rise Setup
tCP
tCH
tCL
tCSS
200
ns
80
ns
80
ns
80
ns
CS Fall to SCLK Rise Hold
tCSH
20 + (0.5
x tCP)
ns
DIN to SCLK Setup
DIN Hold after SCLK
SCLK Rise to CS Fall Delay
CS Rise to SCLK Rise Hold
CS Pulse-Width High
tDS
tDH
tCS0
tCS1
tCSW
55
ns
0
ns
20
ns
80
ns
200
ns
Note 1: All devices are 100% production tested at TA = +25°C. Temperature limits are guaranteed by design.
Note 2: The input offset voltage includes the effects of mismatches in the internal VCC/2 resistor dividers.
Note 3: For gain of 0.25V/V, the input common-mode range is -1V to VCC - 2V.
Note 4: The input current of a CMOS device is too low to be accurately measured on an ATE and is typically on the order of 1pA.
Note 5: Parts are functional with fSCLK = 10MHz.
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