DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBM29LV080A-12PTN 데이터 시트보기 (PDF) - Fujitsu

부품명
상세내역
제조사
MBM29LV080A-12PTN
Fujitsu
Fujitsu Fujitsu
MBM29LV080A-12PTN Datasheet PDF : 49 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
MBM29LV080A-70/-90/-12
Table 6 MBM29LV080A Extended Command Definitions
Command
Sequence
Fast Mode Set
Fast Program *1
Fast Mode Reset *1
Extended Sector
Protection *2
Bus
Write
Cycles
Req'd
3
2
2
4
First Bus
Write Cycle
Addr Data
XXXH
XXXH
XXXH
AAH
A0H
90H
Second Bus
Write Cycle
Third Bus
Write Cycle
Addr Data Addr Data
XXXH 55H XXXH 20H
PA
PD
XXXH F0H *3
XXXH 60H SPA 60H SPA 40H
Fourth Bus
Read Cycle
Addr Data
SPA SD
SPA:Sector address to be protected. Set sector address (SA) and (A10, A6, A1, A0) = (0, 0, 1, 0).
SD: Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected
sector addresses.
*1: This command is valid while Fast Mode.
*2: This command is valid while RESET=VID.
*3: The data "00H" is also acceptable.
Read/Reset Command
The read or reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the read/reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Character-
istics and Waveforms for the specific timing parameters.(See Figures 5.1 and 5.2.)
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the device resides in the target system. PROM pro-
grammers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register. Fol-
lowing the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read
cycle from address X001H returns the device code (MBM29LV080A = 38H). (See Tables 3.1 and 3.2.)
All manufacturer and device codes will exhibit odd parity with the MSB (DQ7) defined as the parity bit.
Sector state (protection or unprotection) will be informed address X0002H.
Scanning the sector addresses (A19, A18, A17, A16) while (A10, A6, A1, A0) = (0, 0, 1, 0) will produce a logical “1” at
device output DQ0 for a protected sector. The programming verification should be perform margin mode on the
protected sector. (See Table 2.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command se-
quence.
13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]