DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBM29LV080A-12PTN 데이터 시트보기 (PDF) - Fujitsu

부품명
상세내역
제조사
MBM29LV080A-12PTN
Fujitsu
Fujitsu Fujitsu
MBM29LV080A-12PTN Datasheet PDF : 49 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
MBM29LV080A-70/-90/-12
s AC CHARACTERISTICS
Read Only Operations Characteristics
Parameter
Symbols
Description
JEDEC Standard
Test Setup
tAVAV
tRC Read Cycle Time
— Min.
tAVQV
tACC Address to Output Delay
CE = VIL
OE = VIL
Max.
tELQV
tCE Chip Enable to Output Delay
OE = VIL Max.
tGLQV
tOE Output Enable to Output Delay
— Max.
tEHQZ
tDF Chip Enable to Output HIGH-Z
— Max.
tGHQZ
tDF Output Enable to Output HIGH-Z
— Max.
tAXQX
tOH
Output Hold Time From Address,
CE or OE, Whichever Occurs First
Min.
tREADY RESET Pin Low to Read Mode
— Max.
-70
(Note)
70
70
70
30
25
25
0
20
-90
(Note)
90
90
90
35
30
30
0
20
Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV080A-70)
1 TTL gate and 100 pF (MBM29LV080A-90/-12)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
-12
(Note)
Unit
120 ns
120 ns
120 ns
50
ns
30
ns
30
ns
0
ns
20
µs
Device
Under
Test
CL
3.3 V
IN3064
or Equivalent
2.7 k
6.2 k
Diodes = IN3064
or Equivalent
Notes: CL = 30 pF including jig capacitance (MBM29LV080A-70)
CL = 100 pF including jig capacitance (MBM29LV080A-90/-12)
Figure 4 Test Conditions
25

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]