MBM29LV800TE/BE60/70/90
• Write/Erase/Program Operations
Parameter
Symbol
MBM29LV800TE/BE
60
70
90
Unit
JEDEC Standard Min Typ Max Min Typ Max Min Typ Max
Write Cycle Time
tAVAV
tWC
60 70 90 ns
Address Setup Time
tAVWL
tAS
0 0 0 ns
Address Hold Time
tWLAX
tAH
45 45 45 ns
Data Setup Time
tDVWH
tDS
30 35 45 ns
Data Hold Time
tWHDX
tDH
0 0 0 ns
Output Enable Setup Time
tOES
0 0 0 ns
Read
Output Enable
Hold Time
Toggle and Data
Polling
0 0 0 ns
tOEH
10 10 10 ns
Read Recover Time Before Write tGHWL tGHWL 0 0 0 ns
Read Recover Time Before Write tGHEL tGHEL 0 0 0 ns
CE Setup Time
tELWL
tCS
0 0 0 ns
WE Setup Time
tWLEL
tWS
0 0 0 ns
CE Hold Time
tWHEH
tCH
0 0 0 ns
WE Hold Time
tEHWH
tWH
0 0 0 ns
Write Pulse Width
tWLWH
tWP
30 35 45 ns
CE Pulse Width
tELEH
tCP
30 35 45 ns
Write Pulse Width High
tWHWL tWPH 25 25 25 ns
CE Pulse Width High
tEHEL
tCPH 25 25 25 ns
Byte
8
8 8
Programming Operation
tWHWH1 tWHWH1
µs
Word
16
16 16
Sector Erase Operation *1
tWHWH2 tWHWH2 1 1 1
s
VCC Setup Time
tVCS 50 50 50 µs
Rise Time to VID *2
tVIDR 500 500 500 ns
Voltage Transition Time *2
tVLHT
4 4 4 µs
Write Pulse Width *2
tWPP 100 100 100 µs
OE Setup Time to WE Active *2
tOESP
4 4 4 µs
CE Setup Time to WE Active *2
tCSP
4 4 4 µs
Recover Time From RY/BY
tRB
0 0 0 ns
RESET Pulse Width
tRP 500 500 500 ns
RESET High Level Period Before
Read
tRH 200 200 200 ns
BYTE Switching Low to Output
High-Z
tFLQZ 25 25 30 ns
(Continued)
30