MBRS1100T3 데이터 시트보기 (PDF) - ON Semiconductor

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MBRS1100T3

Schottky Power Rectifier Surface Mount Power Package

ON Semiconductor 

MBRS1100T3, MBRS190T3

Preferred Devices

Schottky Power Rectifier

Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes, in

surface mount applications where compact size and weight are critical

to the system. These state-of-the-art devices have the following

features:

Features

• Pb−Free Packages are Available

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 Volts

• 175°C Operating Junction Temperature

• Guardring for Stress Protection

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 2500 units per reel

• Cathode Polarity Band

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Peak Repetitive Reverse Voltage

VRRM

V

Working Peak Reverse Voltage

VRWM

DC Blocking Voltage MBRS190T3

VR

90

MBRS1100T3

100

Average Rectified Forward Current

TL = 163°C

TL = 148°C

IF(AV)

A

1.0

2.0

Non−Repetitive Peak Surge Current

IFSM

50

A

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

Operating Junction Temperature (Note 1)

Voltage Rate of Change

TJ

dv/dt

−65 to +175 °C

10

V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dPD/dTJ < 1/RqJA.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERE

90, 100 VOLTS

SMB

CASE 403A

PLASTIC

MARKING DIAGRAM

AYW

B1xG

B1 = Device Code

x = C for MBRS1100T3

9 for MBRS190T3

A = Assembly Location

Y = Year

W = Work Week

G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2007

1

March, 2007 − Rev. 9

Publication Order Number:

MBRS1100T3/D

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