FBR801 데이터 시트보기 (PDF) - Electronics Industry

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FBR801

FAST RECOVERY BRIDGE RECTIFIERS

Electronics Industry 

FBR800 - FBR810

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

FEATURES :

* High case dielectric strength

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

* Ideal for printed circuit board

* Pb / RoHS Free

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per

MIL - STD 202 , Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 6.1 grams

FAST RECOVERY

BRIDGE RECTIFIERS

BR10

φ 0.158 (4.00)

0.142 (3.60)

0.290 (7.36)

0.210 (5.33)

0.520 (13.20)

0.480 (12.20)

AC

0.77 (19.56)

0.73 (18.54)

AC

0.052 (1.32)

0.048 (1.22)

0.30 (7.62)

0.25 (6.35)

0.75 (19.1)

Min.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 50 °C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage drop per Diode at IF = 4.0 A

Maximum DC Reverse Current

Ta = 25 °C

at Rated DC Blocking Voltage

Ta = 100 °C

Maximum Reverse Recovery Time (Note 1)

Typical Thermal Resistance per diode (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

SYMBOL

VRRM

VRMS

VDC

IF(AV)

FBR FBR FBR FBR FBR FBR FBR

800 801 802 804 806 808 810

50 100 200 400 600 800 1000

35 70 140 280 420 560 700

50 100 200 400 600 800 1000

8.0

UNIT

V

V

V

A

IFSM

200

A

I2t

VF

IR

IR(H)

Trr

RθJC

TJ

TSTG

160

A2S

1.3

V

10

µA

200

µA

150

250

500

ns

2.5

°C/W

- 50 to + 150

°C

- 50 to + 150

°C

Notes :

1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.

2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.

Page 1 of 2

Rev. 02 : March 24, 2005

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