F1S60P03 데이터 시트보기 (PDF) - Intersil
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F1S60P03 Datasheet PDF : 7 Pages
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RFG60P03, RFP60P03, RF1S60P03SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFG60P03, RFP60P03, RFS60P03SM
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage, (Rgs = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Maximum Power Dissipation
Derate Above 25oC . . . . .
(Figure
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. PD
...
-30
-30
±20
60
Refer to Peak Current Curve
Figure 6
176
1.17
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
IDSS
IGSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
rDS(ON)
tON
td(ON)
tr
ID = 60A, VGS = 10V
VDD = 15V, ID ≈ 60A, RL = 0.25Ω,
VGS = -10V, RG = 2.5Ω,
(Figure 13)
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
tOFF
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
CRSS
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -24V, ID ≈ 60A,
RL = 0.4Ω
Ig(REF) = -3mA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
(Figure 3)
TO-220AB, TO- 263AB
TO-247
MIN TYP MAX UNITS
-30
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-50
µA
-
-
±100 nA
-
-
0.027 Ω
-
-
140
ns
-
20
-
ns
-
75
-
ns
-
35
-
ns
-
40
-
ns
-
-
115
ns
-
190 230 nC
-
100 120 nC
-
7.5
9
nC
-
3000
-
pF
-
1500
-
pF
-
525
-
pF
-
-
0.85 oC/W
-
-
62 oC/W
-
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -60A
-
-
-1.75
Diode Reverse Recovery Time
trr
ISD = -60A, dISD/dt = 100A/µs
-
-
200
NOTE:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
UNITS
V
ns
4-141
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