MT46H16M16 데이터 시트보기 (PDF) - Micron Technology

부품명

상세내역

제조사

MT46H16M16

Mobile DDR SDRAM

Micron Technology 

256Mb: x16, x32 Mobile DDR SDRAM

Operations

Figure 15: Consecutive READ Bursts

CK#

CK

Command

Address

DQS

DQ

T0

T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n

READ

Bank,

Col n

NOP

CL = 2

READ

Bank,

Col b

NOP

NOP

NOP

DOUT

n

DOUT

n+1

DOUT

n+2

DOUT

n+3

DOUT

b

DOUT

b+1

DOUT

b+2

DOUT

b+3

CK#

CK

Command

Address

DQS

DQ

T0

READ

Bank,

Col n

T1

T2 T2n T3 T3n T4 T4n T5 T5n

NOP

CL = 3

READ

Bank,

Col b

NOP

NOP

NOP

DOUT

n

DOUT

n+1

DOUT

n+2

DOUT

n+3

DOUT

b

DOUT

b+1

Transitioning data

Don’t Care

Notes:

1. DOUT n (or b) = data-out from column n (or column b).

2. BL = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).

3. Shown with nominal tAC, tDQSCK, and tDQSQ.

4. Example applies only when READ commands are issued to the same device.

PDF: 09005aef82091978 / Source: 09005aef8209195b

MT46H16M16LF__2.fm - Rev. H 6/08 EN

30

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2005 Micron Technology, Inc. All rights reserved.

Share Link: