MT46H16M16 데이터 시트보기 (PDF) - Micron Technology
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MT46H16M16 Datasheet PDF : 79 Pages
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256Mb: x16, x32 Mobile DDR SDRAM
Operations
Figure 16: Nonconsecutive READ Bursts
CK#
CK
Command
Address
DQS
DQ
T0
T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n T6
READ
Bank,
Col n
NOP
CL = 2
NOP
READ
Bank,
Col b
NOP
CL = 2
NOP
NOP
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
b
DOUT
b+1
DOUT
b+2
CK#
CK
Command
Address
T0
READ
Bank,
Col n
DQS
DQ
T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n T6
NOP
NOP
CL = 3
READ
Bank,
Col b
NOP
NOP
CL = 3
NOP
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
Transitioning data
DOUT
b
Don’t Care
Notes:
1. DOUT n (or b) = data-out from column n (or column b).
2. BL = 4 or 8 (if burst is 8, the second burst interrupts the first).
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
4. Example applies when READ commands are issued to different devices or nonconsecutive
READs.
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
31
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©2005 Micron Technology, Inc. All rights reserved.
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