MT48H16M16LFBF-8IT 데이터 시트보기 (PDF) - Micron Technology
부품명
상세내역
제조사
MT48H16M16LFBF-8IT Datasheet PDF : 71 Pages
| |||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Register Definition
Table 4: Burst Definition Table
Burst Length Starting Column Address
2
A0
0
1
4
A1
A0
0
0
0
1
1
0
1
1
8
A2
A1
A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Order of Accesses Within a Burst
Type = Sequential Type = Interleaved
0-1
1-0
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1
1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
CAS Latency (CL)
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the first piece of output data. The latency can be set to two or three
clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available by clock edge n + m. The DQs will start driving as a result of the clock
edge one cycle earlier (n + m - 1), and provided that the relevant access times are met,
the data will be valid by clock edge n + m. For example, assuming that the clock cycle
time is such that all relevant access times are met, if a READ command is registered at T0
and the latency is programmed to two clocks, the DQs will start driving after T1 and the
data will be valid by T2, as shown in Figure 7 on page 16.
Reserved states should not be used as unknown operation or incompatibility with future
versions may result.
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
15
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Share Link: 