MTW32N25E 데이터 시트보기 (PDF) - Motorola => Freescale

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MTW32N25E

TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on)= 0.08 OHM

Motorola => Freescale 

MTW32N25E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

250

300

—

380

—

Vdc

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 250 Vdc, VGS = 0 Vdc)

(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

Vdc

2.0

—

4.0

—

7.0

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 32 Adc)

(ID = 16 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD= 125 Vdc, ID = 32 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 200 Vdc, ID = 32 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 32 Adc, VGS = 0 Vdc)

(IS = 32 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.07

0.08

Ohm

Vdc

—

2.2

2.6

—

—

2.5

11

20

—

mhos

—

3800

5350

pF

—

726

1020

—

183

370

—

31

60

ns

—

133

266

—

93

186

—

108

216

—

97

136

nC

—

22

—

—

43

—

—

41

—

Vdc

—

1.0

1.5

—

0.92

—

Reverse Recovery Time

(See Figure 14)

(IS = 32 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

312

—

ns

—

220

—

—

93

—

—

3.6

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

13

—

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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