MTY25N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
600
—
—
714
—
Vdc
—
mV/°C
IDSS
µAdc
—
—
10
—
—
200
IGSS
—
—
100
nAdc
VGS(th)
2
—
4
Vdc
—
7
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 12.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 25 Adc)
(ID = 12.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 12.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 300 Vdc, ID = 25 Adc,
VGS = 10 Vdc,
RG = 4.7 Ω)
(VDS = 480 Vdc, ID = 25 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 25 Adc, VGS = 0 Vdc)
(IS = 25 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
—
0.21
Ohm
—
5.2
—
—
Vdc
6
7
18
—
—
mhos
—
7300 10220
pF
—
700
1100
—
110
250
—
32
60
ns
—
90
175
—
170
300
—
110
200
—
240
350
nC
—
30
—
—
110
—
—
65
—
Vdc
—
0.9
1.2
—
0.8
—
Reverse Recovery Time
(See Figure 14)
(IS = 25 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
620
—
ns
—
310
—
—
310
—
—
10.42
—
µC
—
4.5
—
nH
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
—
7.5
—
nH
2
Motorola TMOS Power MOSFET Transistor Device Data