MURB1620CTT4G 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
MURB1620CTT4G Datasheet PDF : 5 Pages
| |||
MURB1620CTG, NRVUB1620CTT4G
MAXIMUM RATINGS (Per Leg)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
Average Rectified Forward Current
(Rated VR, TC = 150°C) Total Device
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 150°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
VRRM
VRWM
VR
IF(AV)
IFM
IFSM
Value
200
8.0
16
16
100
Unit
V
A
A
A
Operating Junction and Storage Temperature Range
TJ, Tstg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
Symbol
RqJC
RqJA
TL
Value
3
50
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8 A, TC = 150°C)
(iF = 8 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 150°C)
(Rated DC Voltage, TC = 25°C)
Maximum Reverse Recovery Time
(IF = 1 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1 A, IREC = 0.25 A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
Symbol
vF
iR
trr
Max
0.895
0.975
250
5
35
25
Unit
V
mA
ns
100
50
20
10
5.0
2.0
1.0
TJ = 175°C
100°C 25°C
0.7
0.3
0.1
0.2
0.4
0.6
0.8
1
vF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage, Per Leg
10 K
1.0 K
400
100
20
4
1
0.2
0.04
1.2 0.01 0
TJ = 175°C
100°C
25°C
20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current, Per Leg*
http://onsemi.com
2
Share Link: 