NAND01G-A 데이터 시트보기 (PDF) - STMicroelectronics
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NAND01G-A
STMicroelectronics
NAND01G-A Datasheet PDF : 57 Pages
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table
16., Operating and AC Measurement Conditions.
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Parameter
Supply Voltage (VDD)
Ambient Temperature (TA)
Load Capacitance (CL) (1 TTL GATE and CL)
Input Pulses Voltages
Input and Output Timing Ref. Voltages
Input Rise and Fall Times
Output Circuit Resistors, Rref
1.8V devices
3V devices
Grade 1
Grade 6
1.8V devices
3V devices (2.7 - 3.6V)
3V devices (3.0 - 3.6V)
1.8V devices
3V devices
1.8V devices
3V devices
NAND Flash
Min
Max
1.7
1.95
2.7
3.6
0
70
–40
85
30
50
100
0
VDD
0.4
2.4
0.9
1.5
5
8.35
Units
V
V
°C
°C
pF
pF
pF
V
V
V
V
ns
kΩ
Table 17. Capacitance
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output Capacitance
VIL = 0V
Note: TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested.
10
pF
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