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NCP3065 데이터 시트보기 (PDF) - ON Semiconductor

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NCP3065 Datasheet PDF : 18 Pages
First Prev 11 12 13 14 15 16 17 18
NCP3065, NCV3065
MTB30P06V
Q4
MMBT3904LT1G
Q5
6x 1R0 ±1%R
R15
1k
MMSD4148
0R04
R1 R2 R3 R4 R5 R6 R7
J2
1
+VIN
J3
1206 1206 1206 1206 1206 1206
C4
0.1 mF
C7 +
+ 1 mF / 50 V
C2
220 mF / 50 V
C8
1
GND
J4
1
BC807-LT1G
+VAUX
Q1
Q2
0.1 mF
R9
10 k
0805
U1
8 N.C. SWC 1
7 IPK SWE 2
6 VCC TCAP 3
5 COMP GND 4
NCP3065
SOIC8
R14
NU
R13
NU
D2
CT
R8
PF0504.223NL
L1
15 k
C3
1.8 nF
C1
1206 0.1 mF
D1
MBRS140LT3G
C5 100 pF
J1
1
+LED
+
C6
220 mF /
50 V
R10
0805 1 k
R16
0R15 ±1%
R12
0R15 ±1%
J5
1
-LED
J7
J6
1
ON/OFF
R11
1k2
0805
BC817-LT1G
Figure 25. Buck Demoboard with External Switch Application Schematic
1
GND
Value of Components
Name
Value
C1
100 mF, 50 V, Electrolytic Capacitor
C1, C4, C8 100 nF, Ceramic Capacitor, 1206
C2, C6
220 mF, 50 V, Electrolytic Capacitor
C3
2.2 nF, Ceramic Capacitor, 0805
C5
100 pF, Ceramic Capacitor, 0805
C7
1 mF / 50 V, Ceramic Capacitor, 1206
D1
MBRS540LT3G, Schottky Diode
D2
MMSD4148T1G, Diode
L1
22 mH
Q2
BC817-LT1G, SOT23
Name
Q4
Q5
R1
R8
R9
R10
R11
R12, R16
U1
Test Results
Test
Line Regulation
Output Ripple
Efficiency
Short Circuit Current
Condition
Vin = 8 V to 35 V, Io = 3000 mA
Vin = 12 V, Io = 3000 mA
Vin = 12 V, Io = 3000 mA
Vin = 12 V, Rload = 0.15 W
Value
MTB30P06V, P-MOS transistor
MMBT3904LT1G
40 mW, Resistor 0.5 W
6k8, Resistor 0805
10k, Resistor 0805
1k, Resistor 0805
1k2, Resistor 0805
150 mW, Resistor 0.5 W
NCP3065, SOIC8
< 6%
< 6%
> 78%
Results
http://onsemi.com
14

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