NTE28 데이터 시트보기 (PDF) - NTE Electronics
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NTE28 Datasheet PDF : 2 Pages
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NTE28
Germanium PNP Transistor
High Current, High Gain Amplifier
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +110°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1A, IB = 0, Note 1
45 −
−
V
V(BR)CES IC = 300mA, VBE = 0
60 −
−
V
Floating Potential
Collector Cutoff Current
VEBF VCB = 60V, IE = 0
−
ICEX VCE = 45V, VBE(off) = 2V, TC = +71°C −
ICBO VCB = 2V, IE = 0
−
VCB = 60V, IE = 0
−
− 0.5 V
− 15 mA
− 0.2 mA
− 4.0 mA
Emitter Cutoff Current
ON Characteristics (Note 1)
IEBO
VBE = 30V, IC = 0
VBE = 30V, IC = 0, TC = +71°C
−
− 4.0 mA
−
− 15 mA
DC Current Gain
hFE IC = 15A, VCE = 2V
IC = 60A, VCE = 2V
60 − 180
15 −
−
Collector−Emitter Saturation Voltage VCE(sat) IC = 15A, IB = 1A
−
− 0.15 V
Base−Emitter Saturation Voltage
Small−Signal Characteristics
VBE(sat)
IC = 60A, IB = 6A
IC = 15A, IB = 1A
IC = 60A, IB = 6A
−
− 0.3 V
−
− 0.6 V
−
− 1.0 V
Common−Emitter Cutoff Frequency
fαe IC = 15A, VCE = 2V
2
−
− kHz
Note 1. To avoid excessive heating of the collector junction, perform test with pulse method.
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