NX3V1T66 데이터 시트보기 (PDF) - NXP Semiconductors.
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NX3V1T66 Datasheet PDF : 20 Pages
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NXP Semiconductors
NX3V1T66
Low-ohmic single-pole single-throw analog switch
11.1 Test circuits
VCC
VIL
E
Z
VI
Y IS
GND
VO
VCC
VIH
E
IS Z
VI
Y
GND
VO
001aag488
Fig 5.
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Test circuit for measuring OFF-state leakage
current
001aag489
Fig 6.
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8. Resistance RON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Min Typ[1] Max
Min
Max
RON(peak) ON resistance VI = GND to VCC;
(peak)
ISW = 100 mA; see Figure 7
VCC = 1.4 V
-
0.8 1.9
-
VCC = 1.65 V
-
0.5 0.8
-
VCC = 2.3 V
-
0.3 0.5
-
VCC = 2.7 V
-
0.25 0.45
-
VCC = 4.3 V
-
0.25 0.45
-
RON(flat) ON resistance VI = GND to VCC;
[2]
(flatness)
ISW = 100 mA
VCC = 1.4 V
-
0.5 1.7
-
VCC = 1.65 V
-
0.25 0.6
-
VCC = 2.3 V
-
0.1 0.2
-
VCC = 2.7 V
-
0.1 0.2
-
VCC = 4.3 V
-
0.1 0.25
-
2.1
Ω
0.9
Ω
0.6
Ω
0.5
Ω
0.5
Ω
1.8
Ω
0.7
Ω
0.2
Ω
0.2
Ω
0.25 Ω
[1] Typical values are measured at Tamb = 25 °C.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
NX3V1T66_5
Product data sheet
Rev. 05 — 24 March 2010
© NXP B.V. 2010. All rights reserved.
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