SST39LF200A-55-4C-B3Q 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39LF200A-55-4C-B3Q Datasheet PDF : 30 Pages
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2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
AC CHARACTERISTICS
Data Sheet
TABLE 14: READ CYCLE TIMING PARAMETERS VDD = 3.0-3.6V
SST39LF200A/400A-45
SST39LF200A/400A/800A-55
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
45
55
ns
TCE
Chip Enable Access Time
45
55
ns
TAA
Address Access Time
45
55
ns
TOE
Output Enable Access Time
30
30
ns
TCLZ1 CE# Low to Active Output
0
TOLZ1 OE# Low to Active Output
0
0
ns
0
ns
TCHZ1 CE# High to High-Z Output
15
15
ns
TOHZ1 OE# High to High-Z Output
15
15
ns
TOH1
Output Hold from Address Change
0
0
ns
T14.7 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 15: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
SST39VF200A/400A/800A-70 SST39VF200A/400A/800A-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
35
45
ns
TCLZ1 CE# Low to Active Output
0
0
ns
TOLZ1 OE# Low to Active Output
0
0
ns
TCHZ1 CE# High to High-Z Output
20
30
ns
TOHZ1 OE# High to High-Z Output
20
30
ns
TOH1
Output Hold from Address Change
0
0
ns
T15.6 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2003 Silicon Storage Technology, Inc.
13
S71117-07-000
11/03
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