NXP Semiconductors
Double ESD protection diodes in SOT23
package
Product data sheet
PESDxS2UT series
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
• Ultra-low reverse leakage current: IRM < 700 nA
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VALUE
UNIT
VRWM
reverse stand-off 3.3, 5.2, 12, 15 V
voltage
and 24
Cd
diode capacitance 207, 152, 38, 32 pF
VR = 0 V;
and 23
f = 1 MHz
number of
2
protected lines
PINNING
PIN
1
2
3
DESCRIPTION
cathode 1
cathode 2
common anode
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
TYPE NUMBER
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
MARKING CODE(1)
*U9
*U1
*U2
*U3
*U4
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
1
3
1
3
2
2
001aaa490
sym022
Fig.1 Simplified outline (SOT23) and symbol.
2004 Apr 15
2