PMBD2835 데이터 시트보기 (PDF) - Philips Electronics
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PMBD2835 Datasheet PDF : 8 Pages
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Philips Semiconductors
High-speed double diodes
Product specification
PMBD2835; PMBD2836
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
repetitive peak reverse voltage
PMBD2835
PMBD2836
VR
continuous reverse voltage
PMBD2835
PMBD2836
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
85 V
−
85 V
−
35 V
−
75 V
−
215 mA
−
125 mA
450 mA
−
4A
−
1A
−
0.5 A
−
250 mW
−65
+150 °C
−
150 °C
1996 Sep 18
3
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