TE28F008BE-B120 데이터 시트보기 (PDF) - Intel
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TE28F008BE-B120 Datasheet PDF : 58 Pages
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8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E
4.15 Extended Temperature Operations—Erase and Program Timings
VPP
VCC
Parameter
5 V ± 10%
12 V ± 5%
2.7 V–3.6 V 3.3 ± 0.3 V 5 V ± 10% 2.7 V–3.6 V 3.3 ± 0.3 V 5 V ± 10%
Typ Max Typ Max Typ Max Typ Max Typ Max Typ Max Unit
Boot/Parameter 0.88 TBD 0.84 7 0.8 7 0.46 TBD 0.44 7 0.34 7 s
Block Erase Time
Main Block
Erase Time
2.5 TBD 2.4 14 1.9 14 1.36 TBD 1.3 14 1.1 14 s
Main Block Write 1.87
1.7
1.4
1.76
1.6
1.2
s
Time (Byte Mode)
Main Block
1.21
1.1
0.9
0.88
0.8
0.6
s
Write Time
(Word Mode)
Byte Write Time 11
10
10
8.8
8
8
µs
Word Write Time 14.3
13
13
8.8
8
8
µs
NOTES:
1. All numbers are sampled, not 100% tested.
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of VCC and VPP. See Note 3 for typical conditions.
3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range. Production programming using
VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.
4. Contact your Intel representative for information regarding maximum byte/word program specifications.
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