PRF957 데이터 시트보기 (PDF) - NXP Semiconductors.
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PRF957 Datasheet PDF : 16 Pages
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Philips Semiconductors
UHF wideband transistor
Product specification
PRF957
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
DC characteristics
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
AC characteristics
Cre
fT
|s21|2
GUM
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
NF
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
IC = 100 µA; IE = 0
IC = 100 µA; IB = 0
IE = 10 µA; IC = 0
VCB = 10 V; IE = 0
VEB = 1 V; IC = 0
IC = 5 mA; VCE = 6 V
IC = 15 mA; VCE = 6 V
20
−
−
V
10
−
−
V
1.5 −
−
V
−
−
100 nA
−
−
100 nA
50
100 200
−
100 −
IC = 0; VCB = 6 V; f = 1 MHz
−
IC = 30 mA; VCE = 6 V; fm = 1 GHz −
IC = 30 mA; VCE = 6 V; f = 1 GHz −
IC = 30 mA; VCE = 6 V;
−
Tamb = 25 °C; f = 1 GHz
IC = 30 mA; VCE = 6 V;
−
Tamb = 25 °C; f = 2 GHz
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
−
f = 1 GHz
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
−
f = 2 GHz
0.4 −
8.5 −
14
−
15
−
9.2 −
1.3 −
1.8 −
pF
GHz
dB
dB
dB
dB
dB
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log -(--1-----–------s---1---1---s-2---2)--1(---1--2---–------s---2--2-----2---) dB
1999 Jul 23
4
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