PSMN009-100B 데이터 시트보기 (PDF) - Philips Electronics
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PSMN009-100B Datasheet PDF : 13 Pages
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Philips Semiconductors
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Pder
=
-------P----t--o---t-------
P
×
100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03ah99
80
60
40
20
0
0
30
60
90 120 150 180
Tmb (°C)
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
102
Limit RDSon = VDS/ ID
tp = 10 µs
100 µs
03ai01
DC
1 ms
10
10 ms
100 ms
1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09158
Product data
Rev. 01 — 29 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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