PSMN009-100B 데이터 시트보기 (PDF) - Philips Electronics

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PSMN009-100B

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

PSMN009-100P/100B

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max Unit

Rth(j-mb)

Rth(j-a)

thermal resistance from junction to mounting base Figure 4

thermal resistance from junction to ambient

SOT78

vertical in free air

- - 0.65 K/W

- 60 - K/W

SOT404

minimum footprint; mounted on a PCB - 50 - K/W

7.1 Transient thermal impedance

1

Zth(j-mb)

(K/W)

δ = 0.5

0.2

10-1

0.1

0.05

0.02

10-2

single pulse

10-3

10-6

10-5

10-4

10-3

10-2

03af48

P

δ

=

tp

T

10-1

tp

t

T

1

tp (s) 10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 09158

Product data

Rev. 01 — 29 April 2002

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

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