PSMN009-100B 데이터 시트보기 (PDF) - Philips Electronics
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PSMN009-100B Datasheet PDF : 13 Pages
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Philips Semiconductors
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
250
ID
(A)
200
150
Tj = 25 °C
10 V
20 V
6V
8V
03ai02
5.5 V
100
ID
(V)
80
VDS > ID x RDSon
60
Tj =175 °C
03ai04
100
40
5V
50
20
VGS = 4.5 V
25 °C
0
0
0.5
1
1.5
2
VDS (V)
0
0
1
2
3
4
5
6
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.02
03ai03
RDSon
(Ω)
Tj = 25 °C
5V
5.5 V
0.015
3
a
2.5
2
03aa29
6V
1.5
8V
0.01
1
0.005
0
VGS = 20 V
50
100
Tj = 25 °C
10 V
150
200
250
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0.5
0
-60
0
60
120
180
Tj (oC)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09158
Product data
Rev. 01 — 29 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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