PSMN009-100B 데이터 시트보기 (PDF) - Philips Electronics
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PSMN009-100B Datasheet PDF : 13 Pages
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Philips Semiconductors
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
100
IS
(A)
VGS = 0 V
80
175 °C
60
40
20
03ai06
Tj = 25 °C
12
VGS
(V)
10
8
6
ID = 75 A
VDD = 80 V
Tj = 25 °C
4
2
03ai08
0
0.0
0.5
1.0 VSD (V) 1.5
0
0
50
100
150
200
QG (nC)
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 75 A; VDD = 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 09158
Product data
Rev. 01 — 29 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8 of 13
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