RB501V-40(2011) 데이터 시트보기 (PDF) - ROHM Semiconductor
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RB501V-40 Datasheet PDF : 4 Pages
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RB501V-40
Data Sheet
100
Ta=125℃
10 Ta=75℃
1
0.1
Ta=25℃
Ta=-25℃
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0.01
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
470
310
30
Ta=25℃
IF=100mA
Ta=25℃
460
n=30pcs
300
IF=10mA
25
n=30pcs
20
450
290
15
440
280
10
430
270
5
AVE:281.5mV
AVE:439.5mV
420
260
0
Ta=25℃
VR=10V
n=10pcs
AVE:2.548uA
VF DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
20
18
Ta=25℃
16
f=1MHz
IR=10V
14
n=10pcs
12
10
8
6
4
2
AVE:5.81pF
0
Ct DISPERSION MAP
15
Ifsm
8.3ms 8.3ms
10
1cyc
5
0
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.50A
0
IFSM DISRESION MAP
30
Ta=25℃
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
10
5
AVE:6.20ns
0
trr DISPERSION MAP
15
1000
Ifsm
t
10
100
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
5
IM=10mA
IF=100mA
10
1ms time
300us
0
1
0.1
1
10
100
0.001
0.1
10
1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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2/3
2011.05 - Rev.B
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