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RB717F 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
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제조사
RB717F
SCHOTTKY BARRIER DIODE
Shenzhen Jin Yu Semiconductor Co., Ltd.
RB717F Datasheet PDF : 2 Pages
1
2
SCHOTTKY BARRIER DIODE
FEATURES:
Low V
F
, Low V
R
High reliability
MARKING: 3E
·
RB717F
SOT-323
Maximum Ratings @T
A
=25
℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FSM
I
O
P
D
T
j
T
stg
Limits
40
40
200
30
200
125
-40-125
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Unit
V
V
mA
mA
mW
℃
℃
Parameter
Reverse voltage leakage current
Symbol Test conditions
MIN
I
R
V
R
=10V
TYP
MAX UNIT
1
μ
A
Forward voltage
Capacitance between terminals
V
F
I
F
=1mA
C
T
V
R
=1V, f=1MHz
0.37
V
2.0
pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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