RF2312 데이터 시트보기 (PDF) - RF Micro Devices

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RF2312

LINEAR GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

RF2312

Absolute Maximum Ratings

Parameter

Input RF Power

Output Load VSWR

Ambient Operating Temperature

Storage Temperature

Rating

+18

20:1

-40 to +85

-40 to +150

Unit

dBm

°C

°C

Parameter

Overall (50Ω)

Frequency Range

Gain

Noise Figure

Input VSWR

Specification

Min.

Typ.

Max.

DC to 2500

14.5

15.1

3.8

4.3

4.2

4.8

1.7:1

2:1

Output VSWR

1.4:1

2:1

Output IP3

Output IP3

Output IP3

Output P1dB

Output P1dB

Output P1dB

Saturated Output Power

Saturated Output Power

Saturated Output Power

Reverse Isolation

Thermal

ThetaJC

Mean Time To Failure

ThetaJC

Mean Time To Failure

Power Supply

Device Voltage (VD)

Operating Current Range

+40

+42

+33

+36

+30

+33

+21

+22

+20

+21

+17

+18.5

+23

+22.5

+20.5

20

114.9

2170

114.05

2170

5.5

5.0

40

100

120

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. RoHS marking based on EUDirective2002/95/EC

(at time of this printing). However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Unit

MHz

dB

dB

dB

dBm

dBm

dBm

dBm

dBm

dBm

dBm

dBm

dBm

dB

°C/W

years

°C/W

years

V

V

mA

Condition

T=25°C, VCC=9V, Freq = 900 MHz,

RC=30Ω, 50Ω System, PIN=-4dBm

3dB Bandwidth

From 50MHz to 300MHz, -30 to +70 °C

From 300MHz to 1000MHz, -30 to +70 °C

Appropriate values for the DC blocking

capacitors and bias inductor are required to

maintain this VSWR at the intended operat-

ing frequency range.

Appropriate values for the DC blocking

capacitors and bias inductor are required to

maintain this VSWR at the intended operat-

ing frequency range.

At 100MHz

At 500MHz

At 900MHz

At 100MHz

At 500MHz

At 900MHz

At 100MHz

At 500MHz

At 900MHz

ICC=100mA, PDISS =0.555W, TAMB=85°C,

TJ = 149°C

No RF Input/Output

TAMB = +85°C

ICC=120mA, PDISS =0.702W, TAMB=85°C,

TJ = 165°C

No RF Input/Output

TAMB = +85°C

On pin 8, ICC=100mA

On pin 8, ICC=40mA

VCC=9.0V, RC=30Ω

3-2

Rev C6 051025

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