RMPA1966 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RMPA1966 Datasheet PDF : 7 Pages
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PRELIMINARY
Absolute Maximum Ratings(1)
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Units
V
V
V
dBm
°C
Electrical Characteristics(2)
Symbol
Parameter
Min.
Typ.
Max. Units
Comments
f
Operating Frequency
CDMA/WCDMA OPERATION
Gp Power Gain
1850
Po Linear Output Power
28.5
16
PAEd PAEd (digital) @ +28.5dBm
PAEd (digital) @ +16dBm
Itot High Power Total Current
Low Power Total Current
WCDMA Adjacent Channel Leakage Ratio
ACLR1 ±5.00MHz Offset
ACLR2 ±10.00MHz Offset
GENERAL CHARACTERISTICS
VSWR Input Impedance
NF Noise Figure
Rx No Receive Band Noise Power
2fo Harmonic Suppression
3fo-5fo
S
Harmonic Suppression
Spurious Outputs(3)(4)
Ruggedness w/ Load Mismatch(4)
Tc Case Operating Temperature
-30
DC CHARACTERISTICS
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
28
20
40
20
520
58
-40
-40
-55
-55
2.0:1
4
-139
-40
-55
25
5.0
1
1910
2.5:1
-60
10:1
85
5
MHz
dB
dB
dBm
dBm
%
%
mA
mA
dBc
dBc
dBc
dBc
Po=+28.5dBm; Vmode=0V
Po=+16dBm; Vmode≥2.0V
Vmode=0V
Vmode≥2.0V
Vmode=0V
Vmode≥2.0V
Po=+28.5dBm, Vmode=0V
Po=+16dBm, Vmode≥2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH +1 DCDCH
Po=+28.5dBm; Vmode=0V
Po=+16dBm; Vmode≥2.0V
Po=+28.5dBm; Vmode=0V
Po=+16dBm; Vmode≥2.0V
dB
dBm/Hz
dBc
dBc
dBc
°C
Po≤+28.5dBm;
1930 to 1990MHz
Po≤+28.5dBm
Po≤+28.5dBm
Load VSWR ≤ 5.0:1
No permanent damage.
mA Vmode≥2.0V
mA Po≤+28.5dBm
µA
No applied RF signal
Notes:
2. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted.
3. All phase angles.
4. Guaranteed by design.
©2007 Fairchild Semiconductor Corporation
RMPA1966 i-Lo™ Rev. C
2
www.fairchildsemi.com
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